High-fill-factor monolithic infrared image sensor

Masafumi Kimata; Naoki Yutani; Hirofumi Yagi; Junji Nakanishi; Natsuro Tsubouchi; Toshiki Seto

doi:10.1117/12.48743

1 December 1991 High-fill-factor monolithic infrared image sensor

Masafumi Kimata, Naoki Yutani, Hirofumi Yagi, Junji Nakanishi, Natsuro Tsubouchi, Toshiki Seto

Proceedings Volume 1540, Infrared Technology XVII; (1991) https://doi.org/10.1117/12.48743
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

A 256 X 256 element platinum silicide monolithic image sensor with a large fill factor has been developed as a high sensitivity infrared image sensor. It is essential to increase the maximum signal charge of the staring infrared image sensor to obtain higher sensitivity. We used the Charge Sweep Device readout architecture and improved operations of the floating diffusion amplifier to increase the maximum signal charge. A 52 X 40 micrometers 2 pixel using a minimum features size of 2 micrometers has a fill factor of 66%. Evaluating the performance of the device, we confirmed the effectiveness of the improved technologies. The measured saturation level is 2.8 X 106 electrons which is determined by the storage capacity of the detector. We estimated from a measurement point at low background temperature that the noise equivalent temperature difference with a f/1.2 optics is 0.036 K at 300 K background.

Citation Download Citation

Masafumi Kimata, Naoki Yutani, Hirofumi Yagi, Junji Nakanishi, Natsuro Tsubouchi, and Toshiki Seto "High-fill-factor monolithic infrared image sensor", Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); https://doi.org/10.1117/12.48743

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