Paper
1 October 1991 The mm-wave MESFET oscillators characterization
A. Karpov
Author Affiliations +
Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157610 (1991) https://doi.org/10.1117/12.2297749
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
The low-noise high efficiency Q-band MESFET oscillators are developed. Their noise, power and temperature characteristics are investigated. The possibility of the 2th and 3th harmonic power generation are demonstrated.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Karpov "The mm-wave MESFET oscillators characterization", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157610 (1 October 1991); https://doi.org/10.1117/12.2297749
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KEYWORDS
Oscillators

Field effect transistors

Diodes

Receivers

Chromium

Gallium arsenide

Polarization

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