Interferometric monitoring and control of silicon incorporation in the diffusion-enhanced silylated resist process

Maureen A. Hanratty; Ajit P. Paranjpe; Steven A. Henck; Rhett Barry Jucha

doi:10.1117/12.56917

1 February 1992 Interferometric monitoring and control of silicon incorporation in the diffusion-enhanced silylated resist process

Maureen A. Hanratty, Ajit P. Paranjpe, Steven A. Henck, Rhett Barry Jucha

Author Affiliations +

Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56917
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

The diffusion enhanced silylated resist or DESIRER process is a well known surface imaging lithographic technique consisting of three steps: exposure, silylation, and dry develop. The success of this method for patterning submicron features depends critically on controlling silicon incorporation in the resist. In this report interferometric data obtained during the resist silylation step and subsequent dry develop etch have been used to correlate silylation parameters and exposure dose with the depth of silicon incorporation. Contrast and linewidth variation as a function of silylation depth have been derived. A kinetics model in conjunction with image intensity simulations has been used to understand the effects of process parameters on pattern quality. The potential of using the interferometric data for process monitoring is also discussed.

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Maureen A. Hanratty, Ajit P. Paranjpe, Steven A. Henck, and Rhett Barry Jucha "Interferometric monitoring and control of silicon incorporation in the diffusion-enhanced silylated resist process", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56917

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