Spin-on glasses in the silicon IC: plague or panacea?

Nadia Lifshitz; Mark R. Pinto

doi:10.1117/12.51015

1 December 1991 Spin-on glasses in the silicon IC: plague or panacea?

Nadia Lifshitz, Mark R. Pinto

Proceedings Volume 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI; (1991) https://doi.org/10.1117/12.51015
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Spin-On Glass (SOG) is used as a planarizing component of the interlevel dielectric in a multilevel integratedcircuit (IC). However, the presence of SOG may compromise IC performance due to water absorption. Several effects will be discussed in the present talk: "Poisoning" of contacts between two metallization levels. Accelerated hot-carrier aging of the MOS transistor.• Formation of mobile positive charge in the SOG layer. The magnitude of this charge may be high enough to invert the silicon surface.• Many-fold increase in the SOG dielectric constant and related increase in parasitic capacitance of the IC.

Citation Download Citation

Nadia Lifshitz and Mark R. Pinto "Spin-on glasses in the silicon IC: plague or panacea?", Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); https://doi.org/10.1117/12.51015

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