Nonlinear transport in GaAs and HgCdTe by photo mixing

Shirun Dong; Rubin Braunstein; Peidong Yang

doi:10.1117/12.130425

28 October 1992 Nonlinear transport in GaAs and HgCdTe by photomixing

Shirun Dong, Rubin Braunstein, Peidong Yang

Proceedings Volume 1726, 1992 Shanghai International Symposium on Quantum Optics; (1992) https://doi.org/10.1117/12.130425
Event: 1992 Shanghai International Symposium on Quantum Optics, 1992, Shanghai, China

Abstract

The carrier lifetime, mobility, and drift velocity are the important parameters of photoconductors. Normally, several independent tests such as conductivity, Hall effect, and decay of photoconductivity, etc., are used to measure these parameters separately. Pc decay sometimes becomes size limited, however, quite a lot of device configurations have small dimensions. Particularly, at low temperature pc decay may be nonexponential, that leads to some errors in the measurement. We applied the photo-mixing technique to measure the transport parameters. When a multimode laser beam is incident upon the photoconductor sample, the carrier generation rate of the sample will contain frequency components made up of the sum, difference, harmonics, and dc components of the incident frequencies as a bias is applied to the sample. We have generalized the theory of photo-mixing for the case of an unmode-locked multimode laser light incident upon a semiconductor. The results yield the photocurrent as a sum of a dc and an ac part.

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Shirun Dong, Rubin Braunstein, and Peidong Yang "Nonlinear transport in GaAs and HgCdTe by photomixing", Proc. SPIE 1726, 1992 Shanghai International Symposium on Quantum Optics, (28 October 1992); https://doi.org/10.1117/12.130425

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KEYWORDS

Gallium arsenide

Mercury cadmium telluride

Photoresistors

Quantum optics

Semiconductors

Temperature metrology

Information operations

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