GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates

Deepak K. Sengupta; Timothy U. Horton; Peter J. Apostolakis; Cynthia A. Rowe; Peter Mares; Milton Feng; Gregory E. Stillman; M. Dodd; S. Lance Cooper; Wen I. Wang

doi:10.1117/12.138626

10 December 1992 GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates

Deepak K. Sengupta, Timothy U. Horton, Peter J. Apostolakis, Cynthia A. Rowe, Peter Mares, Milton Feng, Gregory E. Stillman, M. Dodd, S. Lance Cooper, Wen I. Wang

Author Affiliations +

Proceedings Volume 1735, Infrared Detectors: State of the Art; (1992) https://doi.org/10.1117/12.138626
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

This paper presents the preliminary analysis of quantum-well IR detectors grown on both GaAs and Si substrates.

Citation Download Citation

Deepak K. Sengupta, Timothy U. Horton, Peter J. Apostolakis, Cynthia A. Rowe, Peter Mares, Milton Feng, Gregory E. Stillman, M. Dodd, S. Lance Cooper, and Wen I. Wang "GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138626

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