Paper
5 January 1993 Nonstationary processes in extrinsic photoconductors
Boris I. Fouks
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Abstract
Principles of the theory of nonstationary processes in extrinsic photoconductors and main deductions, following from it, are expounded. They are confirmed by the experimental data for Si and Ge samples doped by various elements. The theory helps to understand the functioning of the extrinsic detectors and arrays on their base.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris I. Fouks "Nonstationary processes in extrinsic photoconductors", Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); https://doi.org/10.1117/12.138993
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Cited by 5 scholarly publications.
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KEYWORDS
Photoresistors

Semiconductors

Infrared technology

Sensors

Ionization

Resistance

Thulium

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