Paper
25 February 1993 Radiation response of 1300-nm optoelectronic components in a natural space environment
Cheryl J. Dale, Paul W. Marshall
Author Affiliations +
Abstract
We report energy-dependent proton and Co-60 test results and analysis assessing performance of In0.53Ga0.47As photodetectors and In0.71Ga0.29As0.61P0.39 laser diodes for satellite applications. Calculations of the nonionizing energy loss (NIEL) for protons in InGaAs allow damage assessment using a general technique for evaluating displacement damage in orbit. Device performance is predicted for several shield thicknesses and orbital conditions. We also discuss effects in optoelectronic devices due to total dose and ionization transients.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheryl J. Dale and Paul W. Marshall "Radiation response of 1300-nm optoelectronic components in a natural space environment", Proc. SPIE 1791, Optical Materials Reliability and Testing: Benign and Adverse Environments, (25 February 1993); https://doi.org/10.1117/12.141165
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CITATIONS
Cited by 7 scholarly publications.
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KEYWORDS
Indium gallium arsenide

Optoelectronic devices

Sensors

Photodiodes

Photodetectors

Semiconductor lasers

Signal detection

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