Effect of bulk doping on the etching rate of silicon by halogen atoms

Andrey I. Krechetov

doi:10.1117/12.143240

16 April 1993 Effect of bulk doping on the etching rate of silicon by halogen atoms

Andrey I. Krechetov

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.143240
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

The concept of field-assisted etching is developed. Numerical solution is obtained for the equilibrium flux of negative halogen ions through a thin (h <EQ 10 angstrom) buffer layer of reaction onto the surface of silicon of various bulk dopings. Results of the numerical simulation are compared with the experimental data.

Citation Download Citation

Andrey I. Krechetov "Effect of bulk doping on the etching rate of silicon by halogen atoms", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.143240

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