Carrier-carrier interactions in GaAs investigated by femtosecond spectroscopy

Ting Gong; Philippe M. Fauchet

doi:10.1117/12.147055

17 June 1993 Carrier-carrier interactions in GaAs investigated by femtosecond spectroscopy

Ting Gong, Philippe M. Fauchet

Proceedings Volume 1861, Ultrafast Pulse Generation and Spectroscopy; (1993) https://doi.org/10.1117/12.147055
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

We present systematic femtosecond pump-probe studies of the initial scattering and cooling processes of hot electrons in intrinsic, n-type, and p-type GaAs for carrier densities from 8 X 10¹⁵ to 10¹⁹ cm^-3 excited at 2 eV. The role of electron- electron scattering in intra-(Gamma) -valley equilibrium, its dependence on the injected carrier density, and its influence on the amplitude and recovery rate of the initial absorption bleaching are established. For a low density (approximately 3 X 10¹⁶ cm^-3), the electron-electron scattering is observed to be most efficient when all the electrons are in Bloch states with the same (large) kinetic energy. The importance and time scales of electron-hole and electron-plasmon interactions are also revealed.

Citation Download Citation

Ting Gong and Philippe M. Fauchet "Carrier-carrier interactions in GaAs investigated by femtosecond spectroscopy", Proc. SPIE 1861, Ultrafast Pulse Generation and Spectroscopy, (17 June 1993); https://doi.org/10.1117/12.147055

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