Design of external cavities for vertical-cavity semiconductor lasers

Alan H. Paxton; Cheryl J. White; Stephen D. Hersee; John Gerard McInerney

doi:10.1117/12.150615

13 August 1993 Design of external cavities for vertical-cavity semiconductor lasers

Alan H. Paxton, Cheryl J. White, Stephen D. Hersee, John Gerard McInerney

Proceedings Volume 1868, Laser Resonators and Coherent Optics: Modeling, Technology, and Applications; (1993) https://doi.org/10.1117/12.150615
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

High power density can be obtained from vertical-cavity surface emitting semiconductor lasers (VCSELs), but the emitting area must be kept small if spatial coherence is desired. We present the result of a theoretical and calculational study of the possibility of placing the gain regions of VCSELs in external cavities to provide mode control over a larger area. A Fabry-Perot or stable resonator with very low loss is required. Several configurations are discussed and evaluated. A ring cavity is the most practical due to its relative lack of sensitivity to misalignment of the mirrors.

Citation Download Citation

Alan H. Paxton, Cheryl J. White, Stephen D. Hersee, and John Gerard McInerney "Design of external cavities for vertical-cavity semiconductor lasers", Proc. SPIE 1868, Laser Resonators and Coherent Optics: Modeling, Technology, and Applications, (13 August 1993); https://doi.org/10.1117/12.150615

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