0.35-um rule, high-density, full-chip x-ray mask patterning

Tatsuo Chijimatsu; Ken'ichi Kawakami; Masafumi Nakaishi; Kazuaki Kondo; Masaaki Nakabayashi; Masaki Yamabe; Kenji Sugishima

doi:10.1117/12.146521

24 June 1993 0.35-um rule, high-density, full-chip x-ray mask patterning

Tatsuo Chijimatsu, Ken'ichi Kawakami, Masafumi Nakaishi, Kazuaki Kondo, Masaaki Nakabayashi, Masaki Yamabe, Kenji Sugishima

Author Affiliations +

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146521
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

We study the dimensional and placement accuracies of masks for X-ray lithography, using a 64 Mbit DRAM as an example. We describe a way to stabilize and control X-ray absorber, and reduce stress induced distortion to within 0.03 micrometers . We improve the accuracy of e- beam writing which takes several hours by automatically calibrating the e-beam deflector periodically and by using a ceramic mask-holder. Placement accuracy was within 0.1 micrometers over a 40 mm square with a 2 hour exposure. We demonstrated that in chip areas with highly regular size and periodicity, we can correct for the proximity effect using only size shifts. In chip areas without high regularity, we used dose correction based on a double-gaussian proximity effect function and improved dimensional accuracy.

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Tatsuo Chijimatsu, Ken'ichi Kawakami, Masafumi Nakaishi, Kazuaki Kondo, Masaaki Nakabayashi, Masaki Yamabe, and Kenji Sugishima "0.35-um rule, high-density, full-chip x-ray mask patterning", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146521

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