Paper
8 August 1993 Determine submicron process window volume with simulator tools
Mircea V. Dusa, Linard Karklin, Mark Goldmann, William M. Gouin, George P. Mirth
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Abstract
A real I-line process case study of a dense array submicron pattern is analyzed using a 3-D simulator tool, instead of the traditional `experimental trials' approach. The array consists of 2-D mask geometry with strong edge distortions at pattern XY corners. The lithography process' most common variations are considered: exposure energy and resist/nitride/oxide thin film thicknesses. Relative edge-to-center linewidth variations are the responses in a quadratic statistical experiment designed for the process window volume determination. Once the process window is built the targets for the process parameters are set and their variations within the window are monitored to desensitize the 2-D mask array edge-to-center distortions. Analysis of the process window volume allows answers to lithography process questions.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mircea V. Dusa, Linard Karklin, Mark Goldmann, William M. Gouin, and George P. Mirth "Determine submicron process window volume with simulator tools", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150460
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KEYWORDS
Fiber optic illuminators

Photomasks

Thin films

Image processing

Lithography

Oxides

Optical lithography

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