Paper
8 August 1993 Isolated-grouped linewidth bias on SVGL Micrascan
Vasanti A. Deshpande, Karey L. Holland, Alex Hong
Author Affiliations +
Abstract
Isolated to grouped linewidth bias is an important factor in determining the capability of an exposure tool. The process latitude can be significantly improved by minimizing the bias for small geometries (0.5 micron and less). The data presented here optimizes process related performances of SVGL Micrascan I (0.5 micron) and Micrascan II (0.35 micron). The work takes into account different contributions to the overall linewidth bias using modeling of aerial images and resist profiles. Experimental results are presented for positive and negative resists on Micrascan I, and positive resist on Micrascan II. The bias for aerial image is predicted by a model. The post-develop bias depends on the process conditions and the resist system used. Optimized processes are used on Micrascan I and II, and data on different substrates are presented.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vasanti A. Deshpande, Karey L. Holland, and Alex Hong "Isolated-grouped linewidth bias on SVGL Micrascan", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150437
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Optical lithography

Coherence (optics)

Cadmium

Photoresist processing

Data modeling

Picture Archiving and Communication System

Semiconducting wafers

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