Spatial characteristics of recombination X-ray lasers

Peixiang Lu; Zhizhan Xu; Zhengquan Zhang; Pinzhong Fan

doi:10.1117/12.155769

10 September 1993 Spatial characteristics of recombination X-ray lasers

Peixiang Lu, Zhizhan Xu, Zhengquan Zhang, Pinzhong Fan

Proceedings Volume 1928, International Symposium on Laser-Plasma Interactions; (1993) https://doi.org/10.1117/12.155769
Event: Laser-Plasma Interactions: the International Symposium, 1992, Shanghai, China

Abstract

The spatial distributions of lithiumlike SiXII ion and sodiumlike CuXIX ion recombination X- ray lasing gains are presented in this paper. It shows that the recombination X-ray lasing gain region is at hundreds of micrometers from the target surface and the electron density in the gain region is about 10¹⁹ cm^-3 while there exists absorption near the target surface with higher electron density (> 10²⁰ cm^-3).

Citation Download Citation

Peixiang Lu, Zhizhan Xu, Zhengquan Zhang, and Pinzhong Fan "Spatial characteristics of recombination X-ray lasers", Proc. SPIE 1928, International Symposium on Laser-Plasma Interactions, (10 September 1993); https://doi.org/10.1117/12.155769

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