Field-assisted photoemission from semiconductor heterostructures up to 1.7 um

A. L. Musatov; S. L. Filippov; K. R. Izraelyants; V. Korotkikh

doi:10.1117/12.142003

1 April 1993 Field-assisted photoemission from semiconductor heterostructures up to 1.7 um

A. L. Musatov, S. L. Filippov, K. R. Izraelyants, V. Korotkikh

Proceedings Volume 1982, Photoelectronic Detection and Imaging: Technology and Applications '93; (1993) https://doi.org/10.1117/12.142003
Event: Photoelectronic Detection and Imaging: Technology and Applications '93, 1993, Beijing, China

Abstract

We present the spectral curves of the photoemission from biased semiconductor heterostructures with Schottky barrier InGaAs-InP-Ag in the region of spectrum up to 1.7 micrometers and consider the main processes that determine the efficiency of photoemission from such structures. We also present the characteristics of dark-current emission from InGaAs-InP- Ag heterostructures and show that it is connected with thermal generation of electrons in the space charge region of InGaAs near the interface.

Citation Download Citation

A. L. Musatov, S. L. Filippov, K. R. Izraelyants, and V. Korotkikh "Field-assisted photoemission from semiconductor heterostructures up to 1.7 um", Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); https://doi.org/10.1117/12.142003

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