Optical and electro-optical investigation InP/InGaAsP buried heterostructure laser diode and fabrication of single lateral mode laser arrays on multi-channelled substrate

V. Rakovics

doi:10.1117/12.2308441

26 July 1993 Optical and electro-optical investigation InP/InGaAsP buried heterostructure laser diode and fabrication of single lateral mode laser arrays on multi-channelled substrate

V. Rakovics

Author Affiliations +

Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 19830M (1993) https://doi.org/10.1117/12.2308441
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary

Abstract

InP/InGaAsP double-channelled substrate buried heterostructure laser diodes (DCS-BH) have low threshold currents, high differential quantum efficiencies, kink-free light-current characteristics and operate in a single lateral mode at high injections. Near-field investigations showed that the light spot is nearly circular and the half maximum of the intensity distribution is about 2 Ã‚Âµm wide. The almost Gaussian far-field intensity distribution is symmetrical. The beam angles are about 40 degree. Laser arrays containing closely spaced narrow active elements have been prepaired for high power, stable lateral mode operation. The laser array structure was grown on a multi-channelled InP substrate by single-step liquid phase epitaxy (LPE). Uniform active layer dimensions for the elements have been obtained.

Citation Download Citation

V. Rakovics "Optical and electro-optical investigation InP/InGaAsP buried heterostructure laser diode and fabrication of single lateral mode laser arrays on multi-channelled substrate", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 19830M (26 July 1993); https://doi.org/10.1117/12.2308441

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