Performances presented by a position-sensitive detector based on amorphous silicon technology

Elvira Fortunato; Manuela Vieira; Carlos N. Carvalho; Guilherme Lavareda; Rodrigo Martins; Fernando Soares; Luis Alberto Almeida Ferreira

doi:10.1117/12.162793

19 November 1993 Performances presented by a position-sensitive detector based on amorphous silicon technology

Elvira Fortunato, Manuela Vieira, Carlos N. Carvalho, Guilherme Lavareda, Rodrigo Martins, Fernando Soares, Luis Alberto Almeida Ferreira

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162793
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

A rectangular dual-axis large area position sensitive detector (PSD), with 5 cm X 5 cm detection area, has been developed by using a hydrogenated amorphous silicon (a-Si:H) PIN photodiode produced by plasma enhanced chemical vapor deposition (PECVD). The requirements needed for the fabrication of these devices are the thickness uniformity of the different layers, the geometry, and the contacts location. In this paper we present results on PSD with special emphasis on the linearity as well as on its response time.

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Elvira Fortunato, Manuela Vieira, Carlos N. Carvalho, Guilherme Lavareda, Rodrigo Martins, Fernando Soares, and Luis Alberto Almeida Ferreira "Performances presented by a position-sensitive detector based on amorphous silicon technology", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162793

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