Paper
1 February 1994 Structural and optical properties of semiconductor heterojunctions and superlattices grown by pulsed-laser evaporation and epitaxy
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Abstract
Basic mechanisms of laser ablation and the most recent results of laser ablation research are discussed here with a focus on semiconductor materials. The pulsed laser evaporation and epitaxy (PLEE) method, which has been developed for epitaxial growth of Cd1-xMnxTe (CMT) thin films and CdTe-CMT multiple quantum wells and superlattices, is reviewed. This method of deposition is based on the application of Nd:YAG and XeCl excimer lasers which are exclusively used for the ablation of solid targets: no other vapor generation devices, such as Knudsen cells, are used in PLEE. Microstructures of CdTe- Cd1-xMnxTe (0 < x < 0.70) have been grown by the ablation of CdTe, Cd1-xMnxTe and Cd targets.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan J. Dubowski "Structural and optical properties of semiconductor heterojunctions and superlattices grown by pulsed-laser evaporation and epitaxy", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); https://doi.org/10.1117/12.167548
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Cited by 4 scholarly publications.
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KEYWORDS
Laser ablation

Thin films

Epitaxy

Nd:YAG lasers

Pulsed laser operation

Gallium arsenide

Optical properties

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