Paper
7 February 1994 High-temperature sapphire extrinsic Fizeau interferometer for strain measurements on silicon carbide materials
Tuan A. Tran, Jonathan A. Greene, M. Alcock, Kent A. Murphy, Russell G. May, Anbo Wang, George Z. Wang, Richard O. Claus, Jack E. Coate
Author Affiliations +
Proceedings Volume 2072, Fiber Optic Physical Sensors in Manufacturing and Transportation; (1994) https://doi.org/10.1117/12.166851
Event: Optical Tools for Manufacturing and Advanced Automation, 1993, Boston, MA, United States
Abstract
A high-temperature sapphire strain gage based on the in-line extrinsic fiber- optic Fizeau interferometer was used to measure strain imparted by a 4000 lb compressive load applied at a temperature of 1100 degree(s)C. Experimental strain sensitivities on the order of 1 (mu) (epsilon) were obtained.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tuan A. Tran, Jonathan A. Greene, M. Alcock, Kent A. Murphy, Russell G. May, Anbo Wang, George Z. Wang, Richard O. Claus, and Jack E. Coate "High-temperature sapphire extrinsic Fizeau interferometer for strain measurements on silicon carbide materials", Proc. SPIE 2072, Fiber Optic Physical Sensors in Manufacturing and Transportation, (7 February 1994); https://doi.org/10.1117/12.166851
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KEYWORDS
Sapphire

Sensors

Silicon carbide

Fiber optics sensors

Fizeau interferometers

Silica

Head

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