Chemical-bond analysis of hydrogen-rich silicon oxynitride

Adele Sassella; Alessandro Borghesi; S. Rojas; Luca Zanotti

doi:10.1117/12.166632

31 January 1994 Chemical-bond analysis of hydrogen-rich silicon oxynitride

Adele Sassella, Alessandro Borghesi, S. Rojas, Luca Zanotti

Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166632
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada

Abstract

We present measurements of the infrared absorption of Si-H, N-H, N-H₂, and Si-N bonds in silicon oxynitride films. The shift of the position of the absorption bands in the spectra of different samples is related to the atomic environment of the bonds in each film.

Citation Download Citation

Adele Sassella, Alessandro Borghesi, S. Rojas, and Luca Zanotti "Chemical-bond analysis of hydrogen-rich silicon oxynitride", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166632

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