Paper
28 July 1994 Optical constants and laser damage thresholds of silicon oxinitride thin films
Alexandra Starke, Achim Bernhardt
Author Affiliations +
Abstract
SiOxNy thin films were prepared by Ion Beam Sputter Deposition (IBS) and Ion Assisted Deposition (IAD) on polished fused-silica- and BK7-substrates. The influence of process parameters on fundamental film properties was analyzed. Investigated parameters in the IAD process were gas composition, substrate temperature, ion current density, ion energy and neutralization current. The deposition rate and the gas composition were found to be essential parameters of the IBS process. Film characterization was performed by spectrophotometric analysis, laser calorimetry, laser damage testing according to ISO 11254 and X-ray spectroscopy to obtain refractive index, absorption coefficient, damage threshold/morphology and film stoichiometry respectively. Important technical details about both deposition processes are reported.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandra Starke and Achim Bernhardt "Optical constants and laser damage thresholds of silicon oxinitride thin films", Proc. SPIE 2114, Laser-Induced Damage in Optical Materials: 1993, (28 July 1994); https://doi.org/10.1117/12.180895
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Ions

Refractive index

Silicon

Absorption

Laser damage threshold

Ion beams

Sputter deposition

Back to Top