Photon-driven chemistry of column V hydrides on GaAs(100)

John Michael White

doi:10.1117/12.180860

21 July 1994 Photon-driven chemistry of column V hydrides on GaAs(100)

John Michael White

Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180860
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The chemistry, driven by 6.4 eV photons, of ammonia, phosphine, and arsine, adsorbed on GaAs(100), is compared. When molecularly adsorbed XH₃ (XequalsN, P, and As) at low temperatures, ca. 100 K, is irradiated, molecular desorption and hydride bond cleavage occurs. The branching between these two channels varies strongly with X; desorption is favored for NH₃ and As-H Bond cleavage favored for AsH₃. The H atoms within the photochemically formed XH₂ groups can also be removed with photons, but only by extensive irradiation.

Citation Download Citation

John Michael White "Photon-driven chemistry of column V hydrides on GaAs(100)", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); https://doi.org/10.1117/12.180860

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