Integration of a novel punch-through heterojunction phototransistor with a compatible MODFET

X. Li; Yuqi Wang; Wen I. Wang

doi:10.1117/12.175259

2 May 1994 Integration of a novel punch-through heterojunction phototransistor with a compatible MODFET

X. Li, Yuqi Wang, Wen I. Wang

Proceedings Volume 2149, Technologies for Optical Fiber Communications; (1994) https://doi.org/10.1117/12.175259
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

A novel punch-through heterojunction phototransistor (PTHPT) integrated with a compatible modulation doped FET (MODFET) was fabricated. The two terminal operating PTHPT can provide the superior properties of high optical gain and high speed. This is done without introducing an amplified shot noise associated with a base bias current as found in a three terminal operating heterojunction phototransistor (HPT). The PTHPT fabricated in a 0.8-micrometers GaAs/AlGaAs material system exhibits an optical conversion gain as high as 1250 at an incident optical power as low as 0.5 (mu) W. The gain changes less than 15 percent over a 20 dB range of the incident optical power. The transient measurements show that the PTHPT has a higher response speed than that of a conventional HPT. The compatible MODFETs with 1-micrometers gate lengths exhibit transconductances over 200 ms/mm and a current density of 160mA/mm. The principle presented here can also be applied to other material systems such as GaSb/AlSb and InGaAs/InP for long wavelength optical communications.

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X. Li, Yuqi Wang, and Wen I. Wang "Integration of a novel punch-through heterojunction phototransistor with a compatible MODFET", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175259

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KEYWORDS

Field effect transistors

Signal to noise ratio

Transistors

Heterojunctions

Photonic integrated circuits

Phototransistors

Gallium arsenide

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