Temperature characterization of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

Jeffrey C. Yu; Larry E. Tarof; T. Baird; D. McGhan; Robert Bruce; D. G. Knight

doi:10.1117/12.175270

2 May 1994 Temperature characterization of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

Jeffrey C. Yu, Larry E. Tarof, T. Baird, D. McGhan, Robert Bruce, D. G. Knight

Author Affiliations +

Proceedings Volume 2149, Technologies for Optical Fiber Communications; (1994) https://doi.org/10.1117/12.175270
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

InP/In_0.53Ga_0.47As (InGaAs) avalanche photodiodes (APDs) are often used in long distance, high bit rate fiber optical transmission systems operating in the 0.92-1.65 micrometers wavelength region. Lately attention has focused on the separate absorption, grading, charge and multiplication (SAGCM) structure. Recent studies have demonstrated that the room temperature device operation is less affected by changes in fabrication parameters than in the more conventional separate absorption, grading and multiplication (SAGM) structure, emphasising the potential of the SAGCM APD for manufacture. However, for coolerless applications, which are increasingly desired, the device temperature is not directly controlled but rather is determined from environmental influences. Therefore it is necessary to evaluate the APD performance as a function of temperature. In this paper temperature dependent measurements of gain, breakdown voltage, leakage current, bandwidth and noise on SAGCM APDs in the range -50 to 85 degree(s)c are presented. It is found that the bandwidth vs. gain dependence, gain and breakdown voltage are strongly correlated with the temperature. The gain-bandwidth product and minimum gain for useful bandwidth both increase with decreasing temperature or decreasing breakdown voltage. In addition, temperature studies of these devices has been used to evaluate the quality of the grading layer in a more stringent manner than from room temperature measurements alone.

Citation Download Citation

Jeffrey C. Yu, Larry E. Tarof, T. Baird, D. McGhan, Robert Bruce, and D. G. Knight "Temperature characterization of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175270

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available