Highly oriented diamond films on Si: growth, characterization, and devices

Brian R. Stoner; D. M. Malta; A. J. Tessmer; J. Holmes; David L. Dreifus; R. C. Glass; A. Sowers; Robert J. Nemanich

doi:10.1117/12.171752

1 April 1994 Highly oriented diamond films on Si: growth, characterization, and devices

Brian R. Stoner, D. M. Malta, A. J. Tessmer, J. Holmes, David L. Dreifus, R. C. Glass, A. Sowers, Robert J. Nemanich

Proceedings Volume 2151, Diamond-Film Semiconductors; (1994) https://doi.org/10.1117/12.171752
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm²/V-s were measured for the highly oriented samples as compared to 2 to 50 cm²/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.

Citation Download Citation

Brian R. Stoner, D. M. Malta, A. J. Tessmer, J. Holmes, David L. Dreifus, R. C. Glass, A. Sowers, and Robert J. Nemanich "Highly oriented diamond films on Si: growth, characterization, and devices", Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); https://doi.org/10.1117/12.171752

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