High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition

Biing-Der Liu; Si-Chen Lee; Kou-Chen Liu; Tai Ping Sun; Sheng-Jehn Yang

doi:10.1117/12.179699

15 July 1994 High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition

Biing-Der Liu, Si-Chen Lee, Kou-Chen Liu, Tai Ping Sun, Sheng-Jehn Yang

Author Affiliations +

Proceedings Volume 2225, Infrared Detectors and Focal Plane Arrays III; (1994) https://doi.org/10.1117/12.179699
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

The InSb metal oxide semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15, and 30 micrometers were fabricated successfully. The SiO₂ prepared by photoenhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common sourch current voltage characteristics show a breakdown voltage exceeding 2 V indicating an excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.

Citation Download Citation

Biing-Der Liu, Si-Chen Lee, Kou-Chen Liu, Tai Ping Sun, and Sheng-Jehn Yang "High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); https://doi.org/10.1117/12.179699

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