Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization

William A. Bonner; Brian Lent; Donald J. Freschi; W. Hoke

doi:10.1117/12.179681

13 July 1994 Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization

William A. Bonner, Brian Lent, Donald J. Freschi, W. Hoke

Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179681
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

We report the liquid encapsulated Czochralski growth and characterization of large, substrate quality single crystal Ga_1-xIn_xAs, 0 < x < 0.10, in excess of 50 millimeters in diameter and weighing 1000 grams. This unique ability to grow large single crystals of ternary III-V compound semiconductors permits realization of the concept of substrate engineering for both homo- and heteroepitaxial applications. One area of particular interest and importance is the development of short visible wavelength (blue) lasers. Wafers with x equals 0.038 have been used for lattice matched MBE growth of ZnSe and ZnCdSe epilayers for blue emitter applications. Low temperature photoluminescence, WDX and double crystal x-ray diffraction (rocking curve) measurements have been utilized to confirm compositional uniformity and crystal quality. Characterization results for both substrate and epitaxial layer are discussed.

Citation Download Citation

William A. Bonner, Brian Lent, Donald J. Freschi, and W. Hoke "Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179681

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