Microwave and rf PECVD of SiOx and SiOxNy thin films

Nancy L.S. Yamasaki; William P. Klapp; Larry Malon

doi:10.1117/12.185803

7 September 1994 Microwave and rf PECVD of SiO_x and SiO_xN_y thin films

Nancy L.S. Yamasaki, William P. Klapp, Larry Malon

Proceedings Volume 2262, Optical Thin Films IV: New Developments; (1994) https://doi.org/10.1117/12.185803
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Plasma-enhanced chemical vapor deposition (PECVD) offers an alternate route to optical thin films, but the relative merits vs conventional methods and between different excitation processes must be evaluated. We investigated the microwave and rf PECVD of SiO_x and SiO_xN_y films using tetraethylorthosilicate (TEOS) mixed with nitrogen, oxygen or nitrous oxide. Plasma emission spectroscopy revealed variations in reactive species' concentrations for different process conditions. Deposition rates were traced for two series of microwave PECVD reactions, and are compared to other processes. For both rf and microwave PECVD processes, film stoichiometry was characterized by IR and Auger spectroscopy. Optical properties were assessed by ellipsometry, IR and visible spectroscopy. Both microwave and rf PECVD process conditions were identified that form SiO_x with less than 2% residual carbon. By varying process conditions, one can span a broad range of SiO_xN_y formulations. Variations in optical properties and film microhardness with changing film stoichiometry are discussed.

Citation Download Citation

Nancy L.S. Yamasaki, William P. Klapp, and Larry Malon "Microwave and rf PECVD of SiO_x and SiO_xN_y thin films", Proc. SPIE 2262, Optical Thin Films IV: New Developments, (7 September 1994); https://doi.org/10.1117/12.185803

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