Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates

Victor P. Kalinushkin; D. I. Murin; Vladimir A. Yuryev; Oleg V. Astafiev; A I. Buvaltsev

doi:10.1117/12.195885

12 December 1994 Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates

Victor P. Kalinushkin, D. I. Murin, Vladimir A. Yuryev, Oleg V. Astafiev, A I. Buvaltsev

Author Affiliations +

Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195885
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic

Abstract

The method for investigation and control of large-scale recombination-active defects in near- surface regions of semiconductor wafers is proposed. The potentialities of the technique proposed are illustrated by the example of germanium single crystals.

Citation Download Citation

Victor P. Kalinushkin, D. I. Murin, Vladimir A. Yuryev, Oleg V. Astafiev, and A I. Buvaltsev "Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); https://doi.org/10.1117/12.195885

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