Exoelectron emission testing of technology inserting point defects into semiconductors

Yuri Dekhtyar

doi:10.1117/12.186740

14 September 1994 Exoelectron emission testing of technology inserting point defects into semiconductors

Yuri Dekhtyar

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186740
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Exoelectr on anal yzes C EAD of poi nt defects both i n crystalline and amorphous semiconductors is considered. The below concentrati on threshol ds of poi nt defects and Ion—implanted impurities that may be estimated by this method are 17 -3 13 1 -310 .. . 10 cm and 10 . . . 10 cm , correspondingly. Keywords: point defects, testing, semiconductors, exoelectron anal yzes.

Citation Download Citation

Yuri Dekhtyar "Exoelectron emission testing of technology inserting point defects into semiconductors", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186740

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