Hydrogenated amorphous silicon speed sensor based on the flying spot technique

Manuela Vieira; Alessandro Fantoni; A. Felipe Macarico; Fernando Soares; Rodrigo Martins

doi:10.1117/12.206916

24 April 1995 Hydrogenated amorphous silicon speed sensor based on the flying spot technique

Manuela Vieira, Alessandro Fantoni, A. Felipe Macarico, Fernando Soares, Rodrigo Martins

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206916
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

PIN devices based on hydrogenated amorphous silicon (a-Si:H) became fundamental elements of many different types sensors, based on either the transverse or the lateral photovoltaic effect. In the past we have developed a transient technique, called the Flying Spot Technique (FST), based on the lateral photoeffect. FST allows, not only to infer the ambipolar diffusion length but also the effective lifetime of the photogenerated carriers once the light spot velocity and geometry of the structure were known. In this paper we propose to apply this technique backwards in order to detect the path and velocity of an object that is moving in a light source direction. The light reflected back from the object is analyzed through p.i.n. structure being the transient transverse photovoltage dependent on the object movement (position and velocity). Assuming known the transport properties of the material and the geometry of the device and using a triangulation method we show that it is possible to map the object movement. Details concerning material characterization, simulation and device geometry are presented.

Citation Download Citation

Manuela Vieira, Alessandro Fantoni, A. Felipe Macarico, Fernando Soares, and Rodrigo Martins "Hydrogenated amorphous silicon speed sensor based on the flying spot technique", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206916

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