Selectively varying the number of active quantum wells in integrated devices using only one growth step

Carl E. Norman; A. R. Pratt; M. R. Fahy; Robin L. Williams; A. Marinopoulou; F. Chatenoud

doi:10.1117/12.206336

10 April 1995 Selectively varying the number of active quantum wells in integrated devices using only one growth step

Carl E. Norman, A. R. Pratt, M. R. Fahy, Robin L. Williams, A. Marinopoulou, F. Chatenoud

Proceedings Volume 2398, Circular-Grating Light-Emitting Sources; (1995) https://doi.org/10.1117/12.206336
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The phenomenon of indium migration off the sidewalls of features on patterned GaAs substrates during MBE growth has been studied. The level of migration depends strongly on the arsenic flux and the growth temperature. Modulating the arsenic flux during the growth of multilayer structures allows the number of active quantum wells to vary from one region of a device to another.

Citation Download Citation

Carl E. Norman, A. R. Pratt, M. R. Fahy, Robin L. Williams, A. Marinopoulou, and F. Chatenoud "Selectively varying the number of active quantum wells in integrated devices using only one growth step", Proc. SPIE 2398, Circular-Grating Light-Emitting Sources, (10 April 1995); https://doi.org/10.1117/12.206336

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