Paper
14 July 1995 Measurements of the temporal response of vanadium oxide thin films in the infrared
G. J. Calverley, David C. Emmony, David A. Huckridge, Keith L. Lewis
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Abstract
High resolution 400ns TEA carbon dioxide laser pulses with a 100ns rise time were used to observe the 10.6 micrometers radiation transmitted by polycrystalline vanadium oxide coatings deposited on germanium substrates. The variation in the transmission and reflection of the vanadium oxide coatings was simultaneously observed throughout the duration of the incident pulse over a range of incident fluences. The observation of fluence related changes in the behavior of both the transmitted and reflected pulses showed that the coatings exhibited a semiconductor-to-metallic phase transition that was power related and not energy dependent.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. J. Calverley, David C. Emmony, David A. Huckridge, and Keith L. Lewis "Measurements of the temporal response of vanadium oxide thin films in the infrared", Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); https://doi.org/10.1117/12.213719
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KEYWORDS
Vanadium

Oxides

Semiconductors

Thin films

Germanium

Thin film coatings

Absorption

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