Design, synthesis and characterization of poly(trimethylsilylmethyl methacrylate-co-chloromethyl styrene) for 193-nm exposure

Bruce W. Smith; David A. Mixon; Anthony E. Novembre; Shahid A. Butt

doi:10.1117/12.210400

9 June 1995 Design, synthesis and characterization of poly(trimethylsilylmethyl methacrylate-co-chloromethyl styrene) for 193-nm exposure

Bruce W. Smith, David A. Mixon, Anthony E. Novembre, Shahid A. Butt

Author Affiliations +

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210400
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Requirements of materials for lithography at 193 nm limit single layer resist candidates to those with high optical transmission. A random copolymer of trimethylsilymethyl methacrylate (SI) and chloromethyl styrene (CMS), [P(SI-CMS)], has been shown to be highly sensitive negative 193 nm resist in both bi-layer and single layer modes. Such resists show maximum sensitivity with an optical absorbance of the coating of log₁₀e, or 0.434. Through control of the mole ratio of the monomers in the P(SI-CMS) copolymer, absorbance values have been optimized for film thicknesses of 0.2 - 0.3 micrometers for 90:10 SI:CMS, 0.35 - 0.45 micrometers for 95:5 SI:CMS and 0.55 - 0.65 micrometers for 98:2 SI:CMS. Optical absorbance of the CMS is at a maximum in the 190 to 205 nm range, allowing the copolymer to be tailored for a large degree of crosslinking at a relatively low CMS concentration. Spray development of these materials is performed with ethanol, followed by a two step methanol/isopropanol-water rinse. Sensitivities are on the order of 4 to 20 mj/cm² at M_w near 40,000 g/mol. Furthermore, these ratios have been found to produce optimum O₂ etch resistance.

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Bruce W. Smith, David A. Mixon, Anthony E. Novembre, and Shahid A. Butt "Design, synthesis and characterization of poly(trimethylsilylmethyl methacrylate-co-chloromethyl styrene) for 193-nm exposure", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210400

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