Development-free vapor laser photolithography with 0.4-um resolution

Yongyuan Yang; Xiaoyin Hong; Liming Dai; Albert W.H. Mau

doi:10.1117/12.210405

9 June 1995 Development-free vapor laser photolithography with 0.4-um resolution

Yongyuan Yang, Xiaoyin Hong, Liming Dai, Albert W.H. Mau

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210405
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

We investigate an all dry etching process of the development-free vapor photolithography (DFVP) with 315 XeF excimer laser. After masked exposure, SiO₂ on a silicon wafer and beneath a photoaccelerator polymer layer can be directly etched by etching vapor which is a mixture of HF, water and N₂. Ultimately, patterns with 0.4 micron resolution were obtained. We have investigated the effect of the etching temperature and time, exposure energy and 5-ni-troacenaphthene concentration on the resolution and discussed the mechanism of DFVP.

Citation Download Citation

Yongyuan Yang, Xiaoyin Hong, Liming Dai, and Albert W.H. Mau "Development-free vapor laser photolithography with 0.4-um resolution", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210405

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