Focus shift and process latitude of contact holes on attenuated phase-shifting masks

Alfred K. K. Wong; Richard A. Ferguson; Ronald M. Martino; Andrew R. Neureuther

doi:10.1117/12.209278

26 May 1995 Focus shift and process latitude of contact holes on attenuated phase-shifting masks

Alfred K. K. Wong, Richard A. Ferguson, Ronald M. Martino, Andrew R. Neureuther

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209278
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Focus shift and process latitude of contact features on both dark-field and light-field attenuated phase-shifting masks and binary intensity masks were examined using experimentally measured aerial images from the Ziess MSM-100 with IBM AIMS software, the scalar and thin-mask approximation in SPLAT, and the rigorous electromagnetic simulator TEMPEST. The dark-field attenuated phase-shifting mask (aPSM) contact holes show the most severe amount of focus shift, although the shift is not much different from that of space openings. Exposure latitude of dark field aPSM features shows a 12% improvement (from 33% to 45%) over conventional binary intensity mask. Depth-of-focus is also improved. under biasing of the mask features can also improve the process latitude of dark-field masks, whereas the contrary is true for light-field mask features. In general, the process latitude of light-field contact features is worse than that of dark-field features, indicating the need for positive deep-UV photoresist technology.

Citation Download Citation

Alfred K. K. Wong, Richard A. Ferguson, Ronald M. Martino, and Andrew R. Neureuther "Focus shift and process latitude of contact holes on attenuated phase-shifting masks", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209278

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