Paper
23 June 1995 Optical and electrical properties induced in phototransistors and imaging CCD by vacuum and gamma irradiation
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Abstract
The effects of vacuum and (gamma) -irradiation as well as their joint effects on electrical and optical properties of phototransistors and imaging charge coupled devices are discussed. These effects will be related not only to bulk effects, but also to surface effects which are enhanced due to vacuum environments.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shlomo Hava and Nathan Pinhas "Optical and electrical properties induced in phototransistors and imaging CCD by vacuum and gamma irradiation", Proc. SPIE 2483, Space Environmental, Legal, and Safety Issues, (23 June 1995); https://doi.org/10.1117/12.212567
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KEYWORDS
Charge-coupled devices

Photodiodes

Phototransistors

Quantum efficiency

Capacitance

Interfaces

Light emitting diodes

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