One-point wafer bonding for highly accurate x-ray masks

Masatoshi Oda; Takashi Ohkubo; Hideo Yoshihara

doi:10.1117/12.212772

3 July 1995 One-point wafer bonding for highly accurate x-ray masks

Masatoshi Oda, Takashi Ohkubo, Hideo Yoshihara

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212772
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

We have proposed a new method of bonding Si wafers to glass frames for highly accurate X-ray masks. The method, called one-point bonding, is characterized by bonding the wafer at a very small area on the outer region of the wafer and floating the wafer over the frame except at the bonding area. This construction frees the wafer from any external force that acts on the frame. We found that this bonding method does not cause deformation of the wafer or pattern placement shifts in the membrane. The bonding of a 4-mm-diameter glued area is strong enough to withstand a vertical load of 150 g, therefore, wafers bonded to the frame by this method are not peeled off during mask handling. We have confirmed that no deformations occur in wafers bonded by this method even if the frame is deformed in a stepper.

Citation Download Citation

Masatoshi Oda, Takashi Ohkubo, and Hideo Yoshihara "One-point wafer bonding for highly accurate x-ray masks", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212772

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