Midwavelength infrared Hg1-xCdxTe photoconductor performance at T>80K

John F. Siliquini; Charles A. Musca; Brett D. Nener; Lorenzo Faraone

doi:10.1117/12.218211

8 September 1995 Midwavelength infrared Hg_1-xCd_xTe photoconductor performance at T>80K

John F. Siliquini, Charles A. Musca, Brett D. Nener, Lorenzo Faraone

Proceedings Volume 2552, Infrared Technology XXI; (1995) https://doi.org/10.1117/12.218211
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

This study is concerned with the temperature dependent noise and responsivity performance of n-type x equals 0.32 Hg_1-xCd_xTe photoconductors. The fundamental noise sources that ultimately limit the specific detectivity, D_(lambda )^*, at temperatures T > 80 K are identified and correlated with the experimental material parameters of the device. A device model is presented for the responsivity and noise voltage which takes into account surface effects such as surface recombination and accumulation layer shunting. The model is in good agreement with the experimental values over the full temperature range from 80 to 300 K. Using a combination of experimental results and model calculations, the optimum device thickness and free electron concentration are presented which maximize D_(lambda )^* for a given operating temperature. Furthermore, it is shown that under ideal conditions it is possible to achieve background limited performance at temperatures up to 210 K. Experimental results are presented for responsivity, noise voltage, semiconductor surface charge density and D_(lambda )^* for an n-type x equals 0.32 Hg_1-xCd_xTe photoconductive detector as a function of temperature in the range 80 to 300 K. For a signal wavelength of 4 micrometer and a 40 degree field of view, a background limited D_(lambda )^* of 3.8 X 10¹¹ cmHz^1/2W^-1 was obtained for temperatures up to 180 K, while D_(lambda )^* of 1.4 X 10¹¹ and 2 X 10⁹ cmHz^1/2W^-1 were measured at 200 K and 300 K, respectively.

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John F. Siliquini, Charles A. Musca, Brett D. Nener, and Lorenzo Faraone "Midwavelength infrared Hg_1-xCd_xTe photoconductor performance at T>80K", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); https://doi.org/10.1117/12.218211

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KEYWORDS

Sensors

Tellurium

Temperature metrology

Photoresistors

Doping

Semiconductors

Interference (communication)

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