Determination of the composition of a complex semiconductor compound from its thermal emission spectrum

Victor A. Botte

doi:10.1117/12.218199

1 September 1995 Determination of the composition of a complex semiconductor compound from its thermal emission spectrum

Victor A. Botte

Author Affiliations +

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218199
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

The possibility of use of the thermal emission of a complex semiconductor compound for determination of its forbidden band gap and, hence, the composition is examined. Measurements were carried out on p-type Hg_1-xCd_xTe films with 0.197 <EQ X <EQ 0.233 at room temperature.

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Victor A. Botte "Determination of the composition of a complex semiconductor compound from its thermal emission spectrum", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218199

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