High Frequency Silicon Impact Ionization Avalanche Transit Time (IMPATT) Sources Beyond 100 GHz

K. Chang; M. Morishita; C. Sun

doi:10.1117/12.959641

27 February 1981 High Frequency Silicon Impact Ionization Avalanche Transit Time (IMPATT) Sources Beyond 100 GHz

K. Chang, M. Morishita, C. Sun

Proceedings Volume 0259, Millimeter Optics; (1981) https://doi.org/10.1117/12.959641
Event: 1980 Huntsville Technical Symposium, 1980, Huntsville, United States

Abstract

This paper summarizes the recent state-of-the-art results in silicon IMIPATT sources beyond 100 GHz. A bridge type double-quartz-standoff diode package has been developed and successfully used for frequency up to 255 GHz. Power combining techniques have been demonstrated to incorporate several diodes in a circuit that combines the power efficiently at 140 GHz and 217 GHz. Finally, a phase-locked source has been developed to achieve frequency stabilization at 217 GHz.

Citation Download Citation

K. Chang, M. Morishita, and C. Sun "High Frequency Silicon Impact Ionization Avalanche Transit Time (IMPATT) Sources Beyond 100 GHz", Proc. SPIE 0259, Millimeter Optics, (27 February 1981); https://doi.org/10.1117/12.959641

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