Raman studies of silicon layers formed by cluster beam deposition

M. Ehbrecht; L. Holz; Friedrich Huisken; Yu. N. Polivanov; V. V. Smirnov; O. M. Stelmakh

doi:10.1117/12.226210

3 November 1995 Raman studies of silicon layers formed by cluster beam deposition

M. Ehbrecht, L. Holz, Friedrich Huisken, Yu. N. Polivanov, V. V. Smirnov, O. M. Stelmakh

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226210
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

Raman studies of Si layers prepared on c-Si and Al₂O₃ substrates at 300 K by well defined cluster beams have been carried out to establish correlation between the cluster species and the layer composition. The Si clusters were generated by a carbon-dioxide-laser-induced decomposition of SiH₄ in a flow reactor and were transferred to a free molecular flow by introducing a skimmer into the reaction zone. A mass spectroscopic analysis shows that this source emits two qualitatively different types of clusters: small clusters consisting of up to 12 atoms and large species of nearly 10³ atoms. To produce the Si layers the substrate was placed perpendicular to the cluster beam. The Raman spectra of the deposited clusters show a broad amorphous-like band and a relatively sharp peak at 518.1 cm^-1. Analysis of the Raman shift and line width of this peak based on phonon confinement models allows us to conclude that this peak corresponds to nanocrystals with a size of about 3 nm. This size corresponds to the number of atoms in the large clusters of the cluster beam. It means that the layers conserve the specific properties of the large incident free clusters.

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M. Ehbrecht, L. Holz, Friedrich Huisken, Yu. N. Polivanov, V. V. Smirnov, and O. M. Stelmakh "Raman studies of silicon layers formed by cluster beam deposition", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226210

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KEYWORDS

Raman spectroscopy

Silicon

Chemical species

Nanocrystals

Phonons

Spectroscopy

Crystals

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