Optimization of active-layer and cavity design parameters for low-threshold GaN/AlGaN double-heterostructure diode lasers

Marek Osinski; Petr Georgievich Eliseev

doi:10.1117/12.238945

1 May 1996 Optimization of active-layer and cavity design parameters for low-threshold GaN/AlGaN double-heterostructure diode lasers

Marek Osinski, Petr Georgievich Eliseev

Author Affiliations +

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.238945
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Calculations are presented aimed at optimizing the design of GaN/AlGaN double- heterostructure diode lasers emitting in the near-UV spectral region. Material parameters of GaN active medium are reviewed and specified for modeling of both edge- and surface- emitting laser devices. Comparison with published experimental results indicates that nonradiative recombination in the active region (most likely occurring at heterojunction interfaces) limits the carrier lifetime to approximately 1 ns. Theoretical minimum threshold current density is shown to depend weakly on the assumed band parameters.

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Marek Osinski and Petr Georgievich Eliseev "Optimization of active-layer and cavity design parameters for low-threshold GaN/AlGaN double-heterostructure diode lasers", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238945

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