On the way from infinite layer compounds to atomic engineering of superconducting cuprates

Michel Lagues; C. F. Beuran; C. Deville Cavellin; B. Eustache; Philippe Germain; C. Hatterer; V. Mairet; C. Partiot; X. M. Xie; Xiang Z. Xu

doi:10.1117/12.250284

5 July 1996 On the way from infinite layer compounds to atomic engineering of superconducting cuprates

Michel Lagues, C. F. Beuran, C. Deville Cavellin, B. Eustache, Philippe Germain, C. Hatterer, V. Mairet, C. Partiot, X. M. Xie, Xiang Z. Xu

Author Affiliations +

Proceedings Volume 2697, Oxide Superconductor Physics and Nano-Engineering II; (1996) https://doi.org/10.1117/12.250284
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The quest for new cuprates compounds exhibiting superconducting properties at elevated temperatures was intensified recently. The synthesis under high pressure led first to an increased Tc record of around 160K with Hg compounds, and second to new bulk compounds including Cu, CO₃ and infinite layer families. Meanwhile the results concerning thin films of new cuprates, even grown by atomic layering, were not as convincing. We describe here the growth of infinite layer related compounds with emphasis on the growth mechanisms. The deposition is performed in the range of 500 to 550 degrees C under atomic oxygen, using real time control by RHEED intensity. Various deposition sequences were used leading mainly to two basic families. The first one belongs to the infinite layer family, while the other one seems to belong to the spin ladder Ca_n-1Cu_n+1O_2n family. Transport properties in a wide range of temperatures are presented and discussed.

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Michel Lagues, C. F. Beuran, C. Deville Cavellin, B. Eustache, Philippe Germain, C. Hatterer, V. Mairet, C. Partiot, X. M. Xie, and Xiang Z. Xu "On the way from infinite layer compounds to atomic engineering of superconducting cuprates", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); https://doi.org/10.1117/12.250284

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