Laser on the base LiF:F-LiNbO3 with the temperature tuning of the generation frequency

Vitaliy M. Khulugurov; Alexander E. Rgechicky; Eugeniy A. Oleynikov; Ewgene N. Karnauhov

doi:10.1117/12.236160

25 March 1996 Laser on the base LiF:F-LiNbO₃ with the temperature tuning of the generation frequency

Vitaliy M. Khulugurov, Alexander E. Rgechicky, Eugeniy A. Oleynikov, Ewgene N. Karnauhov

Proceedings Volume 2698, Solid State Lasers V; (1996) https://doi.org/10.1117/12.236160
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The process of the optic pump energy transformation in the system with temperature tuning phase-matching LiNbO₃ crystal and LiF:F₂⁺ or F₂^- wideband laser medium with homogeneous broadening of the amplification band have been investigated. Nonlinear crystal and wideband medium were placed in the common cavity. Excitation threshold of the wideband medium generation is lower than one for parametric generation, that is why generation of the system starts from wideband generation. Wideband radiation seed of the OPO signal wave and excitation threshold of the system reduced. During the generation development, when the system radiates near OPO lines, additional amplification at OPO frequencies brings the effect of condensation wideband spectrum. Wavelength turning in the region 0.8 - 1.1 micrometer was obtained by OPO in the system on the base LiNbO₃ and LiF:F₂⁺ crystal in common cavity at 0.532 micrometer pumping. Wavelength turning in the region 1.1 - 1.26 micrometer was obtained by OPO in the system on the base LiNbO₃ and LiF:F₂⁺ crystals in common cavity at two-waves pumping (0.532 and 1.064 micrometer). The generation threshold of such a system is essentially less than for OPO on the base LiNbO₃ only.

Citation Download Citation

Vitaliy M. Khulugurov, Alexander E. Rgechicky, Eugeniy A. Oleynikov, and Ewgene N. Karnauhov "Laser on the base LiF:F-LiNbO₃ with the temperature tuning of the generation frequency", Proc. SPIE 2698, Solid State Lasers V, (25 March 1996); https://doi.org/10.1117/12.236160

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