Multiphonon-assisted energy transfer between rare-earth 4f-shells and semiconductor hosts

Akihito Taguchi; Kenichiro Takahei

doi:10.1117/12.229152

3 January 1996 Multiphonon-assisted energy transfer between rare-earth 4f-shells and semiconductor hosts

Akihito Taguchi, Kenichiro Takahei

Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229152
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation

Abstract

We have proposed an energy transfer model, which explains the experimentally observed electronic and optical properties of Yb-doped InP: the Yb 4f-shell is excited by recombination of an electron-hole pair at an electron trap, which is formed by Yb. Quenching of the 4f-shell luminescence at elevated temperatures is explained by the reverse of the excitation process. The energy transfer process requires an energy compensation mechanism, since there is an energy mismatch between the recombination energy of the electron-hole pair and the Yb 4f- shell energy. By assuming that the energy transfer is assisted by a nonradiative multiphonon transition process, the optical properties are well explained, and the transition matrix element is estimated. When this multiphonon-assisted transition mechanism is applied to an Er luminescence center in GaAs, the calculated temperature dependence of the Er 4f-shell luminescence agreed well with the experimental results. The energy transfer model should be generally applicable to rare-earth doped semiconductors.

Citation Download Citation

Akihito Taguchi and Kenichiro Takahei "Multiphonon-assisted energy transfer between rare-earth 4f-shells and semiconductor hosts", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229152

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KEYWORDS

Luminescence

Energy transfer

Semiconductors

Ytterbium

Erbium

Optical properties

Transition metals

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