Evaluation of the dry resist octavinylsilsesquioxan and its application to three-dimensional electron-beam lithography

Hans W. P. Koops; Sergey V. Babin; Mark A. Weber; G. Dahm; A. Holopkin; M. N. Lyakhov

doi:10.1117/12.241856

14 June 1996 Evaluation of the dry resist octavinylsilsesquioxan and its application to three-dimensional electron-beam lithography

Hans W. P. Koops, Sergey V. Babin, Mark A. Weber, G. Dahm, A. Holopkin, M. N. Lyakhov

Author Affiliations +

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241856
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Structurization of three-dimensional surfaces has become more and more important for micro- mechanics, micro-electronics, and micro-optics. It is widely accepted that resist processes present fewer hazards to personnel and environment than conventional wet resist processes. Octavinylsilsesquioxan is investigated as a dry negative tone resist. It is employed to structure 250 micrometer deep steep surface steps, to modify fabricated three-dimensional structures with dot gratings for metrology applications, and to generate optical micro-lenses of 6 micrometer to 150 micrometer diameter on wafers and on the end of monomode fibers. The negative tone dry resist, also known as V-T8, enables coating of arbitrary substrates by evaporation in high vacuum. After exposure it is developed in high vacuum by a dry thermal treatment at 200 degrees Celsius. The resist is characterized using layers with a thickness in the range from 50 nm to 1 micrometer. Electrons with an energy ranging from 5 keV to 50 keV are used. The sensitivity of V-T8 films is 40 (mu) C/cm² at 20 keV, which is orders of magnitude higher than that of other dry resist systems. The resist exhibits high dry etch resistivity. Its contrast is increased from 0.7 to 2.1 using plasma etching in CF₄ as a post-development step.

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Hans W. P. Koops, Sergey V. Babin, Mark A. Weber, G. Dahm, A. Holopkin, and M. N. Lyakhov "Evaluation of the dry resist octavinylsilsesquioxan and its application to three-dimensional electron-beam lithography", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241856

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