Fabrication and properties of two-dimensional hybrid array sensor on epitaxial n-InAs films

Georgue L. Kurishev; A. P. Kovchavtzev; V. M. Bazovkin; I. M. Subbotin; I. M. Zakharov; Yu. A. Shlapunov; L. S. Kogan; A. V. Bekhterev

doi:10.1117/12.243049

17 June 1996 Fabrication and properties of two-dimensional hybrid array sensor on epitaxial n-InAs films

Georgue L. Kurishev, A. P. Kovchavtzev, V. M. Bazovkin, I. M. Subbotin, I. M. Zakharov, Yu. A. Shlapunov, L. S. Kogan, A. V. Bekhterev

Author Affiliations +

Proceedings Volume 2746, Infrared Detectors and Focal Plane Arrays IV; (1996) https://doi.org/10.1117/12.243049
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

Properties of n-epilayer InAs-SiO₂ interface with various chemical treatments of InAs surface have been studied. Epilayer InAs films (N_d equals 10¹⁵ cm^-3) of 5 - 7 micron thickness has been grown on n⁺-substrate with doping level 3.10¹⁸ cm^-3. High quality properties of MIS-structures have been observed: surface state density < 10¹¹ cm^-2 eV^-1, flat band voltage 2 - 5 V for SiO₂ 120 nm thickness. The array of photosensitive 128 X 128 MIS-structures with In₂O₃ gate has been mounted on silicon readout multiplexer by flip-chip method. The detectivity of InAs-cells in range of temperatures 80 - 100 K is more than 2(DOT)10¹² cmHz^1/2W^-1.

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Georgue L. Kurishev, A. P. Kovchavtzev, V. M. Bazovkin, I. M. Subbotin, I. M. Zakharov, Yu. A. Shlapunov, L. S. Kogan, and A. V. Bekhterev "Fabrication and properties of two-dimensional hybrid array sensor on epitaxial n-InAs films", Proc. SPIE 2746, Infrared Detectors and Focal Plane Arrays IV, (17 June 1996); https://doi.org/10.1117/12.243049

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