Microstructural Information From Optical Properties In Semiconductor Technology

D. E. Aspnes

doi:10.1117/12.931705

30 April 1981 Microstructural Information From Optical Properties In Semiconductor Technology

D. E. Aspnes

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931705
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The optical properties of a material in the near-ir--near-uv spectral range are predominantly determined by electronic polarizabilities. The electronic polarizabilities are determined in turn by composition, local order, and long-range order. We discuss methods developed to parametrize the information contained in optical properties of micro-scopically heterogeneous systems, and to obtain the values of these parameters. These methods are based on accurate bulk dielectric function values of constituents, effective medium theory, and linear regression analysis. Recent theories that establish limits on allowed values of the dielectric response of two-component systems, regardless of their microstructure, provide an indication of the reliability of these parameters.

Citation Download Citation

D. E. Aspnes "Microstructural Information From Optical Properties In Semiconductor Technology", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931705

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